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第三代
半導(dǎo)體測(cè)試家族
Third generation semiconductor testing family
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QT-4100 power device test system

Applicable to electrical parameter tests of SiC/Si MOSFET, IGBT, diode, triode, thyristor, solid-state discharge tube, three-terminal voltage regulator, optocoupler, etc. Provide a complete set of mature test solutions, fully support dynamic and static parameter tests such as DC, EAS, RGCG, thermal resistance, SW switch characteristics, short circuit, TRR, QG, etc. Realization of the merging of test data from multiple stations.



Voltage and current limiting

High-precision Rdon test

Modular functionality

Multi-station data merge

Type QT-4100 power device test system
Advantages

One-click calibration, batch self-check to prevent mistakes

Low RDON minimum test 0.2mR

Voltage and current limiting protection

Form filling process

Supports extended EAS, LCR, thermal resistance, SW, TRR, QG

Supports PAT function

With SECS/GEM standard interface

Main Features ? Meet the full parameter test process of SiC Mos/IGBT, support 100% online QA
? DC specification: 2kV 200A, extended 8kV 2kA
? AC specification: 1500V 600A short circuit 3000A stray Ls<30nH, protection<300ns
? The first domestic company to realize multi-station merging data, and support test station merging
? Industry recognized standard test solution


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